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DSP Group Unveils SparkPA, Highest RF Transmit Power CMOS Power Amplifier (PA) For 802.11ac Access Points Using TSMC Standard CMOS Process
2016-01-08 05:17:54| rfglobalnet Home Page
DSP Group®, Inc. (NASDAQ: DSPG), announced the launch of SparkPA– a revolutionary RF Power Amplifier (PA) for the high performance and technically challenging 802.11ac Access Point market, using a standard CMOS Process from TSMC (TWSE: 2330, NYSE: TSM).
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power
access
process
DSP Group Unveils SparkPA, Highest RF Transmit Power CMOS Power Amplifier (PA) For 802.11ac Access Points Using TSMC Standard CMOS Process
2016-01-08 05:17:54| wirelessdesignonline News Articles
DSP Group®, Inc. (NASDAQ: DSPG), announced the launch of SparkPA– a revolutionary RF Power Amplifier (PA) for the high performance and technically challenging 802.11ac Access Point market, using a standard CMOS Process from TSMC (TWSE: 2330, NYSE: TSM).
Tags: group
power
access
process
Solid State Broadband High Power RF Amplifier: Model 5163 Datasheet
2016-01-07 16:29:46| rfglobalnet Downloads
Ophir RF’s model 5163 is a 50 Watt solid state broadband amplifier ideally suited for RF immunity testing, and wireless and communication component and subsystem testing. This high power, compact amplifier features excellent 3rd order intercept point, high gain, and a wide dynamic range from its use of Class A/B linear power devices.
Solid State Broadband High Power RF Amplifier: Model 5163
2016-01-07 16:22:39| rfglobalnet Home Page
The new model 5163 from Ophir RF is a 50 Watt solid state broadband amplifier designed to cover the 0.8 to 4.2 GHz frequency range. This high power, compact amplifier features excellent 3rd order intercept point, high gain, and a wide dynamic range from its use of Class A/B linear power devices.
GaN MMIC Power Amplifier suits pulsed radar applications.
2015-11-25 14:31:05| Industrial Newsroom - All News for Today
Rated for 25 W and 8.5–11.0 GHz operation, Model CMPA801B025 features 37 W typical POUT, 16 dB power gain, 35% typical power added efficiency, and less than 0.1 dB power droop. X-Band GaN MMIC Power Amplifier is internally matched to 50 Ω, and is supplied in both 10-lead metal/ceramic flanged package, and smaller form factor pill package for optimal electrical and thermal performance.
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