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Tag: amplifier power
X-Band GaN Solid State Power Amplifier (SSPA): VSX3630
2016-02-05 11:04:59| rfglobalnet Home Page
CPI’s Beverly Microwave Division presents VSX3630 GaN solid state power amplifiers (SSPAs) operating in the X-band (7.8 – 9.8 GHz). These high efficiency, high power, compact amplifiers are rugged, reliable, easy to maintain, and are designed for use as TWTA replacements for military radars.
Tags: state
power
solid
solid state
S-Band GaN Solid State Power Amplifier (SSPA): VSS3617 Datasheet
2016-02-05 11:02:45| rfglobalnet Home Page
The VSS3617 GaN solid state power amplifiers (SSPAs) are designed for operation in the S-band (2.7 – 2.9 GHz), and for use as air traffic control radar transmitters. The utilized GaN transistors provide high gain, high efficiency, and excellent pulse fidelity resulting in exceptional AM/PM, phase-noise, and spectral regrowth performance.
Tags: state
power
solid
solid state
S-Band GaN Solid State Power Amplifier (SSPA): VSS3617
2016-02-05 10:54:43| rfglobalnet Home Page
CPI’s Beverly Microwave Division presents VSS3617 GaN solid state power amplifiers (SSPAs) operating in the S-band (2.7 – 2.9 GHz). These high efficiency, high power, compact amplifiers are easy to maintain, and are designed for use as air traffic control radar transmitters.
Tags: state
power
solid
solid state
Fujitsu Develops GaN Power Amplifier With World's Highest Output Performance For W-Band Wireless Transmissions
2016-01-26 04:54:42| rfglobalnet News Articles
Fujitsu Limited and Fujitsu Laboratories Ltd. (collectively "Fujitsu") recently announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.
Tags: power
performance
highest
wireless
Fujitsu Develops GaN Power Amplifier With World's Highest Output Performance For W-Band Wireless Transmissions
2016-01-26 04:54:42| wirelessdesignonline News Articles
Fujitsu Limited and Fujitsu Laboratories Ltd. (collectively "Fujitsu") recently announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.
Tags: power
performance
highest
wireless
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