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NOR Flash Memory Devices offer fast read/write time.

2015-03-16 13:31:07| Industrial Newsroom - All News for Today

Available with 16-, 32-, or 64-Mbit of memory, 3 V Series SST26VF Serial Quad I/O™ SuperFlash® Memory Devices complete sector and block erase commands in just 18 ms and full chip erase operation in 35 ms. SQI interface, consisting of 104 MHz quad-bit address and data multiplex I/O serial interface, enables low-latency execute-in-place capability with minimal processor buffer memory. Standby current consumption is 15 µA, typical, and active read current at 104 MHz is 15 mA, typical.

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Serial NOR Flash Memory delivers high-speed operation.

2015-03-13 13:31:06| Industrial Newsroom - All News for Today

Using single 1.8 V power supply for core and I/O voltage, 512 Mb density S25FS512S delivers SPI read performance of 80 MBps with quad DDR at 80 MHz clock speeds. Support is also standard for read operation at 133 MHz clock speeds in single, dual, and quad I/O mode as well as 1.08 MBps programming throughput. Available in -40 to +85 and -40 to +105°C operating ranges, memory offers 24- or 32-bit address options, Quad all (QPI, 4-4-4) read mode, and configurable initial read latency.

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Renesas Electronics Develops 28nm Embedded Flash Memory Technology That Realizes Even Faster Read And Rewrites Speeds For Automotive Microcontrollers

2015-02-27 01:39:08| electronicsweb Home Page

Renesas Electronics Corporation, a premier provider of advanced semiconductor solutions, recently announced that it has developed a new flash memory technology that achieves even faster read and rewrite speeds

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Renesas Electronics Develops 28nm Embedded Flash Memory Technology That Realizes Even Faster Read And Rewrites Speeds For Automotive Microcontrollers

2015-02-27 01:39:08| autocentral Home Page

Renesas Electronics Corporation, a premier provider of advanced semiconductor solutions, recently announced that it has developed a new flash memory technology that achieves even faster read and rewrite speeds

Tags: read technology flash electronics

 

NOR Flash Memory Products target wearable devices.

2015-01-26 14:31:26| Industrial Newsroom - All News for Today

With wide-voltage span of 1.7–3.6 V and capacities from 512 Kb to 64 Mb, Series MX25R meets diverse requirements of wearable devices. Units support standard Serial NOR Flash memory interface with ultra-small packages such as USON and WLCSP, and KGD (known good die) products for system-in-package solutions.

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