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Altera to Demonstrate FPGA Technologies at Flash Memory Summit 2014
2014-08-04 06:00:00| Industrial Newsroom - All News for Today
Altera Helps Accelerate Servers and Virtualize Storage and Memory in the Data Center<br /> <br /> SAN JOSE, Calif. - Altera Corporation (NASDAQ: ALTR) today announced it will demonstrate its programmable logic technology and present in multiple technology sessions at the Flash Memory Summit at the Santa Clara Convention Center, taking place August 5 to 7, 2014. Attendees can stop by the Altera booth #621 to learn more about using field programmable gate arrays (FPGAs) as accelerators in the ...This story is related to the following:Electronic Components and DevicesSearch for suppliers of: Integrated Circuits (IC) |
Tags: flash
memory
technologies
demonstrate
UMC licenses 55nm flash memory for wearables
2014-07-15 16:28:49| IT Services - Topix.net
United Microelectronics Corporation has licensed embedded flash memory intellectual property from Cypress Semiconductor for the 55nm process technology node.
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memory
licenses
flash memory
NAND Flash Memory fosters efficiency via performance, capacity.
2014-06-13 14:32:53| Industrial Newsroom - All News for Today
Offering capacities of up to 6.4 TB per product, Atomic Series NAND Flash memory platform complements appliance and server environments. Products ensure data flows seamlessly and with optimal speed, efficacy, and reliability by accelerating data-driven applications. Along with third generation Fusion-io memory-based architecture, features include built-in self-healing for reliability. Areas of use include database and cloud applications, big data analytics, and hyperscale workloads. This story is related to the following:Flash Memories
Tags: performance
flash
memory
capacity
Toshiba, SanDisk NAND flash memory shrinks to 15-nanometer process
2014-04-23 16:24:43| InfoWorld: Top News
Partners Toshiba and SanDisk have developed 15-nanometer process technology for NAND flash memory widely used in smartphones and tablets. The development is the first in the world and will replace the second-generation 19-nm process technology when production begins at Toshiba's plant in Yokkaichi, Japan, Toshiba said.[ Keep up on the day's tech news headlines with InfoWorld's Today's Headlines: Wrap Up newsletter. ]
Tags: process
flash
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toshiba
NAND Flash Memory Device has radiation-tolerant design.
2014-04-08 14:31:45| Industrial Newsroom - All News for Today
Part No. CI-1HN89, based on single-level cell NAND flash technology, offers 8 Gb of reliable data storage in space, military, medical, and other harsh environments subject to potential radiation exposure. Configured as asynchronous NAND flash, device's high-density memory capacity consists of one 8 Gb (1024Mx8) die in hermetically sealed, 48-lead ceramic package. CMOS floating gate technology enables 100K program/erase cycles and 10 year data retention. This story is related to the following:Flash Memories
Tags: design
flash
memory
device