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100 W, 92% Efficient eGaN FET Development Board From Efficient Power Conversion (EPC) For The 6.78 MHz AirFuelTM Wireless Power Standard

2016-02-25 07:03:13| electronicsweb Home Page

Efficient Power Conversion (EPC) announces the EPC9065, a development board that can serve as the amplifier stage for AirFuelTM Alliance Class 4 and Class 5 wireless power transfer applications

Tags: board power development standard

 

HRL Laboratories achieves 1st demo of GaN CMOS FET technology

2016-02-05 17:56:10| Green Car Congress

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High-Side FET Driver suits lithium-ion battery applications.

2016-02-04 14:31:06| Industrial Newsroom - All News for Today

Housed in 16-pin, 5 x 4.4 x 1 mm TSSOP package, 100 V Model bq76200 drives high-side N-channel charge and discharge FETs in batteries commonly used in energy storage systems and motor-driven applications. Device provides protection against inductive transient events, which can cause battery voltages to jump as much as 200% above normal. Fast-switching feature minimizes fault response time and disables discharge FET if battery has been severely discharged.

Tags: applications driver battery suits

 

Toshiba Launches DMOS FET Transistor Arrays With Industry's First 1.5A Sink-Output Driver

2015-12-22 04:02:21| electronicsweb News Articles

Toshiba Corporation's Semiconductor & Storage Products Company recentlyannounced the launch of a new generation of highly efficient transistor arrays, the TBD62064A series and TBD62308A series, with a DMOS FET[1] type sink- output[2] driver

Tags: driver toshiba launches arrays

 

TI Reveals Industry's First 80-V Half-bridge GaN FET Module

2015-03-24 11:31:14| Industrial Newsroom - All News for Today

Fully integrated GaN FET power-stage prototype enables power designers to quickly realize the true benefits of GaN DALLAS -- Texas Instruments (TI) (NASDAQ: TXN) today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a...

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