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DC 4 GHz GaN RF Transistors: QPD1009 Datasheet
2016-04-28 10:01:05| wirelessdesignonline Downloads
The QDP1009 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
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DC 4 GHz GaN RF Transistors: QPD1009 Datasheet
2016-04-28 10:01:05| rfglobalnet Downloads
The QDP1009 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
Tags: ghz
gan
datasheet
transistors
DC 4 GHz GaN RF Transistors: QPD1009 And QPD1010
2016-04-28 09:58:01| rfglobalnet Home Page
The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
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ghz
gan
transistors
DC 4 GHz GaN RF Transistors: QPD1009 And QPD1010
2016-04-28 09:58:01| wirelessdesignonline Products
The QPD1009 and QPD1010 are discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2 GHz, and a linear gain of 24 dB at 2 GHz. The 10W, 50V QPD1010 features an output power of 11W at 2 GHz and a linear gain of 24.7 dB at 2 GHz. These two devices are housed in low thermal resistance 3 x 3 mm packages, and are ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.
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ghz
gan
transistors
0.7-6 GHz Solid State Hybrid Power Amplifier Modules: Model 50HM1G6AB-47 Datasheet
2016-04-21 16:53:14| rfglobalnet Downloads
The Model 50HM1G6AB-47 is a compact, wide-band, hybrid power amplifier module (HPM) that covers 1-6GHz. When used with a sweep generator, the HPM provides a minimum of 50W of RF power instantaneously, and operates from a single DC voltage of +28V.
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