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SkyOne Ultra 2.0 Power Amplifier Module: SKY77360-12

2016-05-27 12:52:26| rfglobalnet Products

The SKY77360-12 SkyOne® Ultra 2.0 Power Amplifier Module is designed specifically for use in 2G quad-band cellular handsets supporting fixed gain Gaussian Minimum-Shift Keying (GMSK), fixed gain linear Enhanced Data for GSM Evolution (EDGE) modulation in the GSM850/900 and DCS1800/PCS1900 bands, TD-SCDMA modulation in Bands 34 and 39, and Class12 General Packet Radio Service (GPRS) multi-slot operation.

Tags: power ultra module amplifier

 

SkyOne Ultra 2.0 Power Amplifier Module: SKY77360-12

2016-05-27 12:52:26| wirelessdesignonline Products

The SKY77360-12 SkyOne® Ultra 2.0 Power Amplifier Module is designed specifically for use in 2G quad-band cellular handsets supporting fixed gain Gaussian Minimum-Shift Keying (GMSK), fixed gain linear Enhanced Data for GSM Evolution (EDGE) modulation in the GSM850/900 and DCS1800/PCS1900 bands, TD-SCDMA modulation in Bands 34 and 39, and Class12 General Packet Radio Service (GPRS) multi-slot operation.

Tags: power ultra module amplifier

 
 

IBM Mainframes, 8-Inch Floppies Power US Nuclear Arsenal

2016-05-26 22:04:19| PC Magazine Desktops Product Guide

A GAO report found several critical government IT systems are more than 50 years old.

Tags: power ibm nuclear arsenal

 

Bringing The Element Of Portability To High Power Amplifiers In Complex Systems

2016-05-26 19:29:47| rfglobalnet Home Page

Innovation tends to lag in the power amplifier side of the system-upgrade business, and hardware systems designers may not fully understand the potential element of portability is solid state amplifiers. Jon Jacocks with Empower RF spent a few minutes with us on the last day of IMS 2016 to discuss the issue.

Tags: high power systems complex

 

NXP Launches GaN RF Power Transistors Optimized For Doherty Amplifiers In Cellular Base-Stations

2016-05-26 10:48:02| rfglobalnet Home Page

NXP Semiconductors N.V. has announced the expansion on their portfolio of 48V gallium nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base-stations. NXP is showcasing the new GaN transistors in booth 1839 at the IEEE International Microwave Symposium (IMS 2016) in San Francisco (23-26 May).

Tags: power cellular optimized launches

 

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