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Vishay Intertechnology's -20 V P-Channel Gen III Mosfet Is First ...
2013-12-04 20:04:41| Semiconductors - Topix.net
Designed to increase efficiency and save space in mobile computing devices, the Vishay Siliconix Si8851EDB offers extremely low on-resistance of 8.0 and 11.0 milliohms at -4.5 V and -2.5 V gate drives, respectively.
P-Channel MOSFETs offer industry-low RDS(on).
2013-11-21 17:08:28| Industrial Newsroom - All News for Today
In applications where saving PCB space is critical, -12 V Model Si5411EDU offers low on-resistance of 8.2 mΩ (-4.5 V) and 11.7 mΩ (-2.5 V) in 3.0 x 1.9 mm PowerPAK ChipFET package. When higher voltage rating is needed, -20 V Model Si5415AEDU features values of 9.6 mΩ (-4.5 V) and 13.2 mΩ (-2.5 V). Both provide 5,000 V ESD protection. Model SiSS23DN, housed in 3.3 x 3.3 mm PowerPAK 1212-8S package, provides 4.5 mΩ (-4.5 V) and 6.3 mΩ (-2.5 V) for applications requiring low on-resistance. This story is related to the following:MOSFETs |
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N- and P-Channel MOSFETs feature on-resistance below 100 mohm.
2013-11-13 14:32:34| Industrial Newsroom - All News for Today
Suited for space-constrained handheld applications, N- and P-channel FemtoFET™ MOSFETs come in 0.6 x 1.0 x 0.35 mm LGA package and offer ESD protection >4,000 V human body model. Continuous drain current values are available from 1.5–3.1 A (N-channel) and -2.5 to -1.6 (P-channel). Typ rdson ranges are 130-370 mΩ (1.8 V), 110-240 mΩ (2.5 V), and 90-200 mΩ (4.5 V) for N-channel MOSFETs and 395-580 mΩ (1.8 V), 145-338 mΩ (2.5 V), and 90-210 mΩ (4.5 V) for P-channel MOSFETs. This story is related to the following:MOSFETs
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Vishay Releases -12 V, -20 V, and -30 V Gen III P-Channel MOSFETs
2013-09-15 03:49:01| Semiconductors - Topix.net
According to a release, designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix MOSFETs released offer a low on-resistance for -12 V, -20 V, and -30 V devices at -4.5 V and -10 V gate drives in the 2 mm by 2 mm footprint area.
Compact P-Channel MOSFETs offer low on-resistance.
2013-09-06 14:30:26| Industrial Newsroom - All News for Today
TrenchFET® Gen III p-channel power MOSFETs include -12 SiA467EDJ and -20 V with respective on-resistance down to 13 and 14.5 mΩ (-4.5 V gate drive) as well as -30 V SiA449DJ and SiA483DJ with respective on-resistance to 20 and 21 mΩ (-10 V gate drive). Models SiA437DJ and SiA467EDJ also feature 30 A current rating for load switch applications with large inrush currents. Designed for use in portable electronics, these products come in 2 x 2 mm PowerPAK® SC-70 package. This story is related to the following:MOSFETs
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