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MACOM Launches New X-Band High Power Amplifiers For Commercial Radar And Communication Applications

2014-04-29 07:14:15| wirelessdesignonline News Articles

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced two new high power MMIC amplifiers ideal for X-Band communication and radar applications.

Tags: high power commercial applications

 

Richardson RFPD Introduces Two Ka-Band GaN On SiC Power Amplifiers From TriQuint

2014-04-25 03:07:39| rfglobalnet News Articles

Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for two Ka-band gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint.

Tags: power sic introduces richardson

 
 

Richardson RFPD Introduces Two Ka-Band GaN On SiC Power Amplifiers From TriQuint

2014-04-25 03:07:39| wirelessdesignonline News Articles

Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for two Ka-band gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint.

Tags: power sic introduces richardson

 

High Gain Amplifiers suit commercial/military radar applications.

2014-04-24 14:30:42| Industrial Newsroom - All News for Today

Supplied in hermetically sealed, metal enclosures, L and S band high gain amplifiers cover 1.2–1.4 GHz and 3.1–3.5 GHz frequency ranges used for commercial and military radar applications as well as observation satellites and communications systems. These RF amplifiers utilize hybrid microwave IC design and advanced GaAs pHEMT technology to produce unconditionally stable module. Other features include built-in voltage regulation, bias sequencing, and reverse bias protection. This story is related to the following:RF Amplifiers

Tags: high applications gain suit

 

Broadband Amplifiers suit applications from 2-18 GHz.

2014-04-17 14:30:56| Industrial Newsroom - All News for Today

Offered in 1 W and 2 W models, Broadband RF Amplifiers utilize hybrid microwave integrated circuit and advanced GaAs pHEMT technology. Connectorized SMA modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection. Featuring hermetically sealed design, amplifiers operate from -55 to +85°C with gain from 32–48 dB, gain flatness from ±1 dB to ±2 dB at 12–18 GHz range, and linearity levels from 39–42 dBm. This story is related to the following:Wideband Amplifiers | RF Amplifiers | Broadband Amplifiers |

Tags: applications suit ghz broadband

 

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