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Tag: broadband
Broadband Matrix Switch: 20-3000 MHz Datasheet
2013-02-11 17:20:47| rfglobalnet Home Page
The MAS4488 is a broadband matrix switch that distributes 8 broadband signals to 8 receivers without any blocking in the 20-3000 MHz frequency range. This datasheet includes information on the switch’s design, control, special features, specifications and more.
Tags: switch
matrix
mhz
broadband
Broadband Matrix Switch: 20-3000 MHz
2013-02-11 17:18:56| rfglobalnet Home Page
The MAS4488 is a broadband matrix switch with an 8 input, 8 output, non-blocking configuration. The system itself is comprised of a processor board, an 8x8 matrix, an LAN interface, a redundant power supply, and manual control.
Tags: switch
matrix
mhz
broadband
EU budget cuts broadband funding
2013-02-11 09:20:00| Telecompaper Headlines
(Telecompaper) The EU Council agreement on the EU's budget for the period 2014-2020 has sharply reduced the amount of funds dedicated to expanding broadband access. The European Commission had proposed EUR 9.2 billion for the digital economy, as part of the Connecting Europe Facility, and in the final agreement, this was reduced to around EUR 1 billion, to be spent mainly on services such as e-government and telemedicine. Neelie Kroes, commissioner for the Digital Agenda, said it was a "missed opportunity", but said she will look for other ways to support financing of new networks, such as through the European Investment Bank. The budget still requires approval by the European Parliament. The major political groups in parliament have said they are not in complete support of the overall spending cuts in the budget, which could lead to a compromise on restoring some of the funding.
Tags: budget
funding
cuts
broadband
New Broadband GaN HEMT Device
2013-02-11 01:55:23| wirelessdesignonline News Articles
IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
Tags: device
broadband
gan
hemt
New Broadband GaN HEMT Device
2013-02-11 01:55:23| rfglobalnet News Articles
IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
Tags: device
broadband
gan
hemt
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