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Tag: lband
L-Band 90 W GaN Power Module supports surface mounting.
2013-10-03 14:30:23| Industrial Newsroom - All News for Today
Optimized for commercial air traffic control, military radar, and long range perimeter monitoring applications at 1.2–1.4 GHz, MAMG-001214-090PSM scales to peak pulse power levels of 100 W in 14 x 24 mm package that supports SMT assembly. Two-stage, fully matched GaN in Plastic power module, under pulsed conditions, delivers output power >90 W with 30 dB typ associated power gain and 58% typ power added efficiency. Product supports 50 V operation and up to 3 ms pulse width/duration. This story is related to the following:Power Modules
Tags: power
surface
supports
module
MACOM Extends GaN Power Leadership With Industry's First Surface Mount L-Band 90W GaN Power Module
2013-09-27 05:47:43| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced the newest entry in its portfolio of GaN in Plastic packaged power products.
Tags: power
surface
leadership
module
LBand Omnislot Antenna
2013-09-16 05:19:07| rfglobalnet Products
HaighFarr’s LBand Omnislot™ is a rugged conformal antenna designed to provide the same radiation characteristics as a Blade/Stub antenna. The Omnislot™ may be provided flat or curved to naturally mate with cylindrical or conical surfaces. The antenna utilizes HaighFarr’s wellproven fabrication techniques and is designed to operate in highdynamic environments.
LBand Omnislot Antenna Datasheet
2013-09-16 04:28:53| rfglobalnet Downloads
HaighFarr’s LBand Omnislot™ is a rugged conformal antenna designed to provide the same radiation characteristics as a Blade/Stub antenna. The Omnislot™ may be provided flat or curved to naturally mate with cylindrical or conical surfaces. The antenna utilizes HaighFarr’s wellproven fabrication techniques and is designed to operate in highdynamic environments.
Tags: antenna
datasheet
lband
datasheet lband
GaN HEMTs target 1.2-1.4 GHz L-band radar systems.
2013-08-27 14:29:57| Industrial Newsroom - All News for Today
Based on 50 V, 0.4µ GaN on SiC foundry process, Models CGHV14250and CGHV14500 optimize performance of band-specific applications ranging from UHF to 1,800 MHz. Model CGHV14250 features 330 W typical output power, 18 dB power gain, and 77% typical drain efficiency, while Model CGHV14500 provides 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency. Available in ceramic/metal flange and pill packages, both transistors feature 0.3 dB pulsed amplitude droop. This story is related to the following:Transistors |
Tags: systems
target
ghz
radar
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