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Tag: lband
Low-Noise L-Band VCO comes in 0.5 x 0.5 x 0.22 in. package.
2014-09-25 14:31:34| Industrial Newsroom - All News for Today
Operating at 1,878–1,879 MHz with 1–4 Vdc tuning voltage range, ceramic resonator-based CRO1878A-LF features SSB spectral purity of -138 dBc/Hz @ 100 kHz offset and operates with average tuning sensitivity of 5 MHz/V. RoHS-compliant VCO delivers 4±2 dBm of output power into 50 Ω load while operating off 5 Vdc supply and drawing 25 mA typ. Operating from -40 to 85°C, low-noice VCO pushes <0.5 MHz/V and pulls <0.5 MHz with 12 dB return loss. Typ second harmonic suppression is -20 dBc. This story is related to the following:Communication Systems and EquipmentSearch for suppliers of: Oscillators | Microwave Oscillators
VCO: CRO1878A-LF Features Remarkable Low Phase Noise Performance In The L-Band
2014-09-23 11:22:50| rfglobalnet News Articles
Z-Communications, Inc. announces a new RoHS compliant VCO (Voltage Controlled Oscillator) model CRO1878A-LF. The ceramic resonator based CRO1878A-LF operates at 1878 to 1879 MHz with a tuning voltage range of 1 to 4 Vdc.
Tags: low
features
performance
phase
Customers Order over 3,000 Next-Generation ViaSat L-band Managed Service Terminals
2014-08-26 06:00:00| Industrial Newsroom - All News for Today
Both airborne and fixed-site terminals in development<br /> <br /> CARLSBAD, Calif. – Customers are beginning to place advance orders for next-generation Mobile Satellite Services (MSS) terminals from ViaSat Inc. (NASDAQ:VSAT) for operation over the recently announced ViaSat worldwide L-band network. The orders, totaling 3,150 terminals, include a mix of both fixed-site machine-to-machine (M2M) and airborne units that are scheduled for delivery next year. Vehicular, maritime, and asset ...This story is related to the following:ServicesAsset Tracking Systems | Communications Terminals
Tags: service
order
customers
managed
HEMT Power Transistor suits L-Band pulsed radar applications.
2014-08-08 15:45:07| Industrial Newsroom - All News for Today
Operating from 1,200–1,400 MHz, Model MAGX-001214-650L00 guarantees 650 W of peak power with typical 19.5 dB of gain and 60% efficiency. Gold-metalized, pre-matched GaN on Silicon Carbide transistor features very high breakdown voltages, which allow stable operation at 50 V under extreme load mismatch conditions. Assembled in ceramic flange package, transistor provides rugged performance in demanding radar applications. This story is related to the following:Power Transistors |
Tags: power
applications
suits
radar
MACOM Announces Industry's Highest Power GaN L-Band Radar Transistor
2014-08-07 10:20:04| rfglobalnet Home Page
M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introducedrecently a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Tags: power
highest
radar
announces
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