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Tag: cband
M/A-COM Announces High Power C-Band GaAs MMIC Amplifier In Plastic Packaging
2013-09-13 10:56:37| wirelessdesignonline News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new high power amplifier that is ideally suited for C-Band radar and communication applications.
Tags: high
power
plastic
packaging
Airborne Antenna Considerations for C-Band Telemetry Systems
2013-08-29 12:53:57| rfglobalnet News Articles
The changeover of many test ranges from Sband to C-band telemetry implies the need to modify or replace current systems. Several antenna-related issues need to be considered in to order facilitate a smooth transition to C-band. Amongst these are changes in vehicle-induced pattern degradation, the effect on increased propagation loss on link budgets, and the potential need for multi-band antennas that also support legacy systems during the transition. This Paper discusses these issues for both existing telemetry systems modified for C-band and for new systems. Conformal and nonconformal antennas will be addressed in this discussion. By David Farr
Tags: systems
considerations
antenna
airborne
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier For C-Band Radar Applications
2013-06-07 10:20:04| rfglobalnet News Articles
Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., recently announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product family.
Tags: high
power
applications
gain
Power Amplifier Modules include S- and C-band versions.
2013-06-05 14:28:09| Industrial Newsroom - All News for Today
Based on Gallium Nitride (GaN) technology, NuPower™ S- and C-band PA modules come in ruggedized packages and exhibit typical efficiencies from 20%–40%. Solid-state PAs accept nominal 0 dBm input and deliver at least 15 W of saturated power across 2,500–6,000 MHz. With 3.15 in.³ form factor, modules suit restrictions of size, weight, and power-constrained applications, such as tactical communications and telemetry for unmanned systems. This story is related to the following:Power Amplifiers
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power
modules
versions
Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027, -Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product ...This story is related to the following:Power Transistors | Power Amplifiers
Tags: high
power
applications
gain