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Tag: linearity
IDT Introduces Radio Frequency Switch With Ultra-High Isolation And Linearity
2014-10-21 09:31:34| wirelessdesignonline News Articles
Integrated Device Technology, Inc. (IDT) recently introduced the F2912 switch, the first in a line of new radio frequency (RF) switch products planned by the semiconductor company.
Tags: radio
switch
frequency
isolation
Richardson RFPD Introduces New High Linearity 75 Reverse Path VGA From MACOM
2014-09-12 11:26:12| rfglobalnet Home Page
Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a new 75 reverse path variable gain amplifier from M/A-COM Technology Solutions.
New 28 - 32 GHz GaN Power Amplifier Offers High Power And High Linearity
2014-09-09 11:45:47| rfglobalnet News Articles
Custom MMIC is pleased to announce the addition of the CMD217, a new 28 to 32 GHz GaN power amplifier in die form, to their growing product line.
GaN Power Amplifier is optimized for power and linearity.
2014-09-08 14:31:26| Industrial Newsroom - All News for Today
As 28–32 GHz GaN power amplifier (PA) in die form, CMD217 features >20 dB gain across operating frequency range with corresponding output 1 dB compression point of +36.7 dBm and saturated output power of +39.3 dBm (8.5 W). Power added efficiency is 28%–35% across band. This fully matched 50 Ω design requires only external bypass capacitors to complete bias circuitry. Suited for Ka-band communication systems applications, die is passivated for reliability and moisture protection. This story is related to the following:Communication Systems and EquipmentPower Amplifiers | Communications Amplifiers | High Power Amplifiers | Linear Amplifiers
Tags: power
optimized
amplifier
gan
GaN PA in Die Form combines power, linearity, and efficiency.
2014-08-26 14:30:41| Industrial Newsroom - All News for Today
Suited for Ku-band communications systems, CMD216 delivers 16 dB of flat gain across entire 14–18 GHz bandwidth, output 1 dB compression point of +37 dBm, and saturated output power of +38 dBm. This power amplifier with fully matched 50 ohm matched design requires bias of Vdd = 28 V, 550 mA, and Vgg = -3.4 V. Power added efficiency is 32% or greater, and external bypass capacitors are only required to complete bias circuitry. Die is passivated for reliability and moisture protection. This story is related to the following:Power Amplifiers
Tags: die
form
power
efficiency
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