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50V GaN HEMT for LTE: CGHV22100 Datasheet
2013-03-14 15:55:24| rfglobalnet Downloads
This datasheet includes a description of the CGHV22100 50V GaN HEMT, as well as information on its specifications. For more information on how it can help improve efficiency and drive down overall costs in LTE, 4G, telecom, and BWA amplifier applications, download the datasheet.
50V GaN HEMT for LTE: CGHV22100
2013-03-14 15:53:33| rfglobalnet Products
This GaN HEMT (gallium-nitride high electron mobility transistor) covers the 1.8-2.2 GHz frequency range. It features 20 dB Gain, -35 dBc ACLR (at 25 W PAVE), and 31-35% efficiency (at 25 W PAVE). A high degree of DPD (digital pre-distortion) correction can also be applied to this transistor.
50V GaN HEMT for LTE: CGHV22100
2013-03-14 15:53:33| rfglobalnet Products
This GaN HEMT (gallium-nitride high electron mobility transistor) covers the 1.8-2.2 GHz frequency range. It features 20 dB Gain, -35 dBc ACLR (at 25 W PAVE), and 31-35% efficiency (at 25 W PAVE). A high degree of DPD (digital pre-distortion) correction can also be applied to this transistor.
AT&T 4G LTE Available In Cleveland
2013-03-14 15:19:59| Telecom - Topix.net
Watch here to see several of the benefits AT&T 4G LTE provides, including: Faster speeds.
Verizon to use cable spectrum for LTE starting this year
2013-03-13 18:24:55| CNET News.com
CTO Nicola Palmer tells Fierce Wireless that the company is on track to begin using the 20MHz of AWS spectrum it bought last year from cable operators to boost capacity on its 4G LTE network. [Read more]
Tags: year
starting
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