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Micron Launches New NAND-based DIMMs, Intel Announces Optane DIMMs
2017-11-16 21:15:58| Extremetech
Intel and Micron both made significant announcements this week about the future of non-volatile RAM and future Optane (3D XPoint) products. The post Micron Launches New NAND-based DIMMs, Intel Announces Optane DIMMs appeared first on ExtremeTech.
Tags: intel
announces
launches
micron
IDT Memory Interface Devices Qualified for DDR4 Enterprise DIMMs on...
2016-04-05 16:50:58| Semiconductors - Topix.net
"Mission #1 for IDT is to push the memory performance and capacity envelope by addressing profound challenges in signal integrity, capacity scaling and fault isolation and correction," said , vice president and general manager of IDT's memory interface products. "We have worked closely with industry leaders such as Dell, Intel and Micron to validate and qualify our components for DIMM applications on Intel Xeon processor E5-2600 v4 product family-based OEM systems.
Tags: on
memory
interface
devices
Samsungs new 20nm DDR4 clears the way for massive 128GB DIMMs
2014-10-23 17:35:38| Extremetech
Samsung's new DDR4 memory is debuting on 20nm technology and targeting huge density improvements. The company claims it can build 128GB modules today -- a far cry from DDR3's current maximum of just 32GB.
Tags: massive
clears
samsungs
dimms
SanDisk announces ULLtra DIMMS: Terabytes of low-latency flash storage directly off the RAM channel
2014-01-23 19:35:54| Extremetech
SanDisk has partnered with Diablo Technologies to bring high-density NAND flash to the DIMM market. Drop-in replacements for DDR3 DIMMs will roll out on IBM servers, offering up to 12.8TB of storage.
Tags: directly
flash
storage
channel
DDR4 Registered DIMMs can enhance server design, performance.
2013-05-28 14:29:40| Industrial Newsroom - All News for Today
Intended for use in server companies' next-generation systems, DDR4 (Double Data Rate 4) RDIMM (Registered Dual Inline Memory Module) features 3.2 Gbps data transfer rate, memory bus speeds that start at 2,133 MHz, and power envelope of 1.2 V. Products operate at 1.35 V, which helps reduce heat output and subsequently extends lifetime of system components. Maximum capacity of 128 GB per chip fosters optimized module construction and internal airflow. This story is related to the following:Dynamic Random Access Memories (DRAM) | Memory Modules
Tags: design
registered
performance
server
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