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Automotive Flash Memories come in NOR and NAND variants.
2014-05-05 14:30:29| Industrial Newsroom - All News for Today
With respective densities of 16, 32, and 64 Mb, automotive serial NOR flash memories S25FL116K, S25FL132K, and S25FL164K are qualified across -40 to +125°C range. Automotive NAND flash products S34ML01G1, S34ML02G1, and S34ML04G1 offer respective densities of 1, 2, and 4 Gb and are qualified from -40 to +105°C. All 6 devices, qualified to AEC-Q100, meet PPAP requirements and are also suited for solar inverters, power switches, factory automation, and safety monitoring devices.<br /> This story is related to the following:Flash Memories | Memories
Tags: flash
automotive
memories
variants
Samsung Begins Mass Production of Industry's First 3-bit NAND Solid State Drive for Data Centers
2014-04-28 05:06:02| Electronics - Topix.net
Samsung Electronics, Co., Ltd., the world leader in advanced memory technology, said today that it has begun mass producing the industry's first high-performance, three-bit-NAND-based SSD for servers and data centers.
Tags: data
state
drive
production
Samsung Begins Mass Production of Industry's First 3-bit NAND Solid State Drive for Data Centers
2014-04-28 04:50:12| Semiconductors - Topix.net
Samsung Electronics, Co., Ltd., the world leader in advanced memory technology, said today that it has begun mass producing the industry's first high-performance, three-bit-NAND-based SSD for servers and data centers.
Tags: data
state
drive
production
Toshiba, SanDisk NAND flash memory shrinks to 15-nanometer process
2014-04-23 16:24:43| InfoWorld: Top News
Partners Toshiba and SanDisk have developed 15-nanometer process technology for NAND flash memory widely used in smartphones and tablets. The development is the first in the world and will replace the second-generation 19-nm process technology when production begins at Toshiba's plant in Yokkaichi, Japan, Toshiba said.[ Keep up on the day's tech news headlines with InfoWorld's Today's Headlines: Wrap Up newsletter. ]
Tags: process
flash
memory
toshiba
NAND Flash Memory Device has radiation-tolerant design.
2014-04-08 14:31:45| Industrial Newsroom - All News for Today
Part No. CI-1HN89, based on single-level cell NAND flash technology, offers 8 Gb of reliable data storage in space, military, medical, and other harsh environments subject to potential radiation exposure. Configured as asynchronous NAND flash, device's high-density memory capacity consists of one 8 Gb (1024Mx8) die in hermetically sealed, 48-lead ceramic package. CMOS floating gate technology enables 100K program/erase cycles and 10 year data retention. This story is related to the following:Flash Memories
Tags: design
flash
memory
device
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