Home › IDT And EPC Collaborate To Integrate Gallium Nitride And Silicon For Faster, Higher Efficiency Semiconductor Devices
 

Keywords :   


IDT And EPC Collaborate To Integrate Gallium Nitride And Silicon For Faster, Higher Efficiency Semiconductor Devices

2015-05-26 05:42:11| rfglobalnet Home Page

Integrated Device Technology, Inc. (IDT) recently announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency.

Tags: higher devices faster efficiency

Category:Telecommunications

Latest from this category

All news
23.04Google Cloud Next 24 Highlights
22.04HIMSS 24 Healthcare IT Conference Hot Topics from AI to Partner Alliances
Telecommunications »
27.04Commentary: Committed to End Plastic Waste
26.04Dead whistleblower accused Boeing of safety breaches
26.04Introducing Mens Hybrid Skincare Brand Enhanse
26.04Washington Corner April 2024
26.04Does history repeat itself?
26.04FDA finalizes guidance to provide further clarity on Veterinary Feed Directives
26.04Post Office paid widow in instalments for silence
26.04NCBA statement on USDA final traceability rule
More »