je.st
news
Tag: hemts
JEDEC-Qualified GaN-on-Silicon HEMTs carry 600 V rating.
2014-03-26 13:30:37| Industrial Newsroom - All News for Today
Low-profile, 600 V GaN-based HEMTs (high electron mobility transistors) utilize EZ-GaN™ technology. Supplied in PQFN88 packages, TPH3002LD and TPH3002LS feature 290 mΩ RDS(on), 29 nC Qrr, and low inductance for high-frequency switching capability. They also feature kelvin connection to isolate gate circuit from high-current output circuit and reduce EMI. Supplied in TO220 package, TPH3002PD/TPH3002PS suit smaller, lower power applications such as adapters and all-in-one computer power supplies. This story is related to the following:Transistors
GaN HEMTs target 1.2-1.4 GHz L-band radar systems.
2013-08-27 14:29:57| Industrial Newsroom - All News for Today
Based on 50 V, 0.4µ GaN on SiC foundry process, Models CGHV14250and CGHV14500 optimize performance of band-specific applications ranging from UHF to 1,800 MHz. Model CGHV14250 features 330 W typical output power, 18 dB power gain, and 77% typical drain efficiency, while Model CGHV14500 provides 500 W typical output power, 17 dB power gain, and 70% typical drain efficiency. Available in ceramic/metal flange and pill packages, both transistors feature 0.3 dB pulsed amplitude droop. This story is related to the following:Transistors |
Tags: systems
target
ghz
radar
Sites : [1] [2]