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Tag: onresistance
Power MOSFET features max on-resistance of 0.99 milliohm.
2013-12-10 14:32:27| Industrial Newsroom - All News for Today
Provided in PMPAK5x6 package with integrated thermal pad and standard SO-8 footprint compatible with other enhanced 5 x 6 mm power packages, AP1A003GMT-HF-3 is intended for use in high-current load switching where low voltage drop across MOSFET switch is required to minimize conduction losses. This RoHS-compliant and BFR-/halogen-free product features breakdown voltage rating of 30 V and max drain-source current rating of 260 A. This story is related to the following:MOSFETs
Tags: power
features
max
mosfet
N- and P-Channel MOSFETs feature on-resistance below 100 mohm.
2013-11-13 14:32:34| Industrial Newsroom - All News for Today
Suited for space-constrained handheld applications, N- and P-channel FemtoFET™ MOSFETs come in 0.6 x 1.0 x 0.35 mm LGA package and offer ESD protection >4,000 V human body model. Continuous drain current values are available from 1.5–3.1 A (N-channel) and -2.5 to -1.6 (P-channel). Typ rdson ranges are 130-370 mΩ (1.8 V), 110-240 mΩ (2.5 V), and 90-200 mΩ (4.5 V) for N-channel MOSFETs and 395-580 mΩ (1.8 V), 145-338 mΩ (2.5 V), and 90-210 mΩ (4.5 V) for P-channel MOSFETs. This story is related to the following:MOSFETs
Tags: feature
mosfets
pchannel
onresistance
FemtoFET MOSFETs with lowest on-resistance target mobile applications
2013-11-06 15:10:35| Semiconductors - Topix.net
Texas Instruments claims to offer the industry's smallest, low on-resistance MOSFETS for space-constrained handheld applications, such as smartphones and tablets.
Tags: mobile
applications
target
lowest
Quad SPST CMOS Analog Switches offer 1.5 ohm low on-resistance.
2013-10-31 13:30:51| Industrial Newsroom - All News for Today
Vishay Siliconix DG1411, DG1412, and DG1413 are ±15 V precision monolithic quad SPST CMOS analog switches. With 100 nsec switching times, these bidirectional products feature 4 independently selectable SPST switches. Respective configurations for DG1411 and DG1412 are NC and NO, while DG1413 has 2 NO and 2 NC switches with break-before-make operation. Max on-resistance flatness is 0.48 Ω, CS(OFF) is 11 pF, CD(ON) is 87 pF, and charge injection ranges from -60 to +135 pC over signal range. This story is related to the following:Single Pole, Single Throw (SPST) Switches |
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offer
analog
switches
Compact P-Channel MOSFETs offer low on-resistance.
2013-09-06 14:30:26| Industrial Newsroom - All News for Today
TrenchFET® Gen III p-channel power MOSFETs include -12 SiA467EDJ and -20 V with respective on-resistance down to 13 and 14.5 mΩ (-4.5 V gate drive) as well as -30 V SiA449DJ and SiA483DJ with respective on-resistance to 20 and 21 mΩ (-10 V gate drive). Models SiA437DJ and SiA467EDJ also feature 30 A current rating for load switch applications with large inrush currents. Designed for use in portable electronics, these products come in 2 x 2 mm PowerPAK® SC-70 package. This story is related to the following:MOSFETs
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compact
low compact