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Tag: onresistance
Power MOSFETs feature low on-resistance.
2013-07-12 14:31:27| Industrial Newsroom - All News for Today
Halogen-free and RoHS-compliant, TrenchFET® Gen III P-channel MOSFETs include -40 V SiS443DN in PowerPAK 1212-8 package and -30 V SiSS27DN in PowerPAK 1212-8S package. Units are optimized for 24, 19, and 12 V load switches as well as adapter and battery switches in wide range of applications including power management in mobile computing, smartphones, and tablets. Max on-resistance is 11.7 mΩ (-10 V) and 16 mΩ (-4.5 V) for SiS443DN and 5.6 mΩ (-10 V) and 9 mΩ (-4.5 V) for SiSS27DN. This story is related to the following:Electrical Equipment and Systems Sponsored by: Globtek Inc. - MOBILE BANNER ADSearch for suppliers of: MOSFETs | Power Switches |
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N-Channel Power MOSFETs offer on-resistance down to 30 mOhm.
2013-05-24 14:36:19| Industrial Newsroom - All News for Today
Available in 8 different packages and 22 additional models, E Series offers extended on-resistance from 30–600 mΩ at 10 V and max current ratings from 6–105 A. RoHS-compliant, 650 V devices withstand high energy pulses in avalanche and commutation modes with guaranteed limits through 100% UIS testing. Based on Siliconix Super Junction Technology, MOSFETs are suited for switch mode applications, including PFC, server/telecom power systems, UPS systems, battery chargers, and LED lighting. This story is related to the following:MOSFETs
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Miniature Dual Load Switch features low on-resistance.
2013-05-23 14:29:01| Industrial Newsroom - All News for Today
Model APE8990-3 dual load switch has RDS(ON) of 20 mΩ and controlled turn on. Unit's two N-channel MOSFETS each support maximum current of 6 A and operate over input voltage range of 0.8–5.5V. Controlled by ON/OFF input interfacing directly with low voltage control signals, switch also includes 150 Ω load resistor and is available in 3 x 2 mm, 14-pin DFN package with thermal pad. Rise time is adjustable, to avoid inrush current, using external ceramic capacitor on CTx pin. This story is related to the following:Electronic Components and DevicesSearch for suppliers of: Miniature Switches |
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Power MOSFET offers on-resistance down to 18 mOhm.
2013-04-23 14:31:50| Industrial Newsroom - All News for Today
Housed in thermally enhanced PowerPAK® SO-8 package, Model SiR872ADP extends ThunderFET® technology to 150 V. Device offers low on-resistance of 18 mΩ at 10 V and 23 mΩ at 7.5 V while maintaining low gate charge of 31 nC at 10 V and 22.8 nC at 7.5 V. N-channel TrenchFET® power MOSFET is optimized for primary-side switching and secondary-side synchronous rectification in DC/DC converters, DC/AC inverters, and boost converters for telecom bricks, solar micro-inverters, and brushless DC motors. This story is related to the following:MOSFETs
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Power MOSFETs offer on-resistance down to 20 mOhm at 4.5 V.
2013-01-16 14:28:54| Industrial Newsroom - All News for Today
Housed in 1.6 x 1.6 x 0.6 mm CSP MICRO FOOT® package, 8 V n-channel Si8424CDB and -20 V p-channel Si8425DB offer maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at 4.5 V gate drive. Smaller 8 V n-channel Si8466EDB, measuring 1 x 1 x 0.55 mm, features max on-resistance of 43 mΩ at 4.5 V and provides 3,000 V typical ESD protection. RoHS-compliant and halogen-free, TrenchFET® power MOSFETs are suited for battery or load switching in power management applications for portable electronics. This story is related to the following:MOSFETs | Field Effect Transistors (FET)