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12W Discrete Power Transistor: TGF2023-2-02 Datasheet

2015-09-01 17:36:58| rfglobalnet Home Page

The TGF2023-2-02 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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30W, 28V, DC-6 GHz Power Transistor: T2G6003028-FS Datasheet

2015-09-01 17:12:48| rfglobalnet Downloads

The T2G6003028-FS is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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30W, 28V, DC-6 GHz Power Transistor: T2G6003028-FL Datasheet

2015-09-01 17:03:49| rfglobalnet Downloads

The T2G6003028-FL is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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18W, 28V, DC-6 GHz Power Transistor: T2G6001528-Q3 Datasheet

2015-09-01 16:54:37| rfglobalnet Downloads

The T2G6001528-Q3 is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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15W, 28V, DC-6 GHz Power Transistor: T2G6001528-SG Datasheet

2015-09-01 16:22:08| rfglobalnet Downloads

The T2G6001528-SG is a 15W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power ghz transistor datasheet

 

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