Home power datasheet
 

Keywords :   


Tag: power datasheet

20-500 MHz, 100 Watt Power Amplifier: ATL-25801 Datasheet

2015-08-07 13:11:42| rfglobalnet Downloads

The ATL-25801 is a 20-500 MHz high-power RF alto amplifier featuring 100 Watts saturated power, 55 dB gain, and 50 ohm SMA RF connectors. These RF power amplifiers are designed for applications including broadband jamming, electronic warfare, EMC testing, mobile and other fixed terminals, and terrestrial point to point and point to multipoint.

Tags: power mhz watt amplifier

 

20-500 MHz, 100 Watt Power Amplifier: ATL-25801 Datasheet

2015-08-07 13:11:42| rfglobalnet Home Page

The ATL-25801 is a 20-500 MHz high-power RF alto amplifier featuring 100 Watts saturated power, 55 dB gain, and 50 ohm SMA RF connectors. These RF power amplifiers are designed for applications including broadband jamming, electronic warfare, EMC testing, mobile and other fixed terminals, and terrestrial point to point and point to multipoint.

Tags: power mhz watt amplifier

 
 

10W, 32V, DC-6 GHz Power Transistor: T1G6001032-SM Datasheet

2015-07-29 15:51:36| rfglobalnet Downloads

The T1G6001032-SM is a 10W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power ghz transistor datasheet

 

100W, 32V, DC-3.5 GHz Power Transistor: TQP0102 Datasheet

2015-07-29 15:44:00| rfglobalnet Downloads

The TQP0102 is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FS Datasheet

2015-07-29 15:41:00| rfglobalnet Downloads

The TGF2819-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

Sites : [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] [28] [29] next »