Home › power datasheet
 

Keywords :   


Tag: power datasheet

30W, 32V, DC-4 GHz Power Transistor: TQP0104 Datasheet

2015-09-01 15:59:15| rfglobalnet Downloads

The TQP0104 is a 30W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

15W, 32V, DC-4 GHz Power Transistor: TQP0103 Datasheet

2015-09-01 15:47:05| rfglobalnet Downloads

The TQP0103 is a 15W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 
 

55W, 28V, DC-3.5 GHz Power Transistor: T2G4005528-FS Datasheet

2015-09-01 15:33:24| rfglobalnet Downloads

The T2G4005528-FS is a 55W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

30W, 32V, DC-3.5 GHz Power Transistor: T1G4003532-FS Datasheet

2015-09-01 15:20:05| rfglobalnet Downloads

The T1G4003532-FS is a 30W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

30W, 32V, DC-3.5 GHz Power Transistor: T1G4003532-FL Datasheet

2015-09-01 14:51:23| rfglobalnet Downloads

The T1G4003532-FS is a 30W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

Sites : [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] next »