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2W GaAs pHEMT MMIC Power Amplifier, 15 To 20 GHz

2013-09-11 03:06:09| rfglobalnet Home Page

Hittite Microwave Corporation has launched a new power amplifier which maintains excellent performance over its operating frequency range. The new amplifier, HMC6981LS6, is ideal for high linearity point-to-point and point-to-multi-point radios, SATCOM, military and space applications.

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2W GaAs pHEMT MMIC Power Amplifier, 15 To 20 GHz Datasheet

2013-09-11 02:59:31| rfglobalnet Downloads

The HMC6981LS 6 is a four-stage GaAs pHEM TMMI C Power Amplifier with an integrated temperaturecompensated on-chip Power Detector, which operatesbetween 15 and 20 GHz.

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GaAs MMIC Driver Amplifier offers high output, low consumption.

2013-08-23 14:27:46| Industrial Newsroom - All News for Today

Supplied in leadless, RoHS-compliant, 4 x 4 mm, SMT package, CMD191C4 operates from 4–10 GHz and delivers 20 dB of gain with corresponding output 1 dB compression point of >+21 dBm. This GaAs MMIC (monolithic microwave integrated circuit) driver amplifier is 50 Ω matched design, which eliminates need for external DC blocks and RF port matching. RF power can be applied at any time, and device is biased with single 5.0 V positive drain supply. This story is related to the following:Electronic Components and Devices Sponsored by: Globtek Inc. - Your Power Partner...For Over 20 Years!Search for suppliers of: Microwave Monolithic Integrated Circuits (MMIC)

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Hittite's 1W MMIC PA With Power Detector Covers 37 To 40 GHz

2013-08-20 04:53:56| rfglobalnet Home Page

Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has launched a new Power Amplifier which is ideal for high linearity point-to-point and point-to-multi-point radios, VSAT and SATCOM applications.

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RFMW Launches GaN Power Doubler MMIC from TriQuint Semiconductor

2013-08-17 17:46:55| Semiconductors - Topix.net

This 24V power doubler features 24dB gain at 1GHz. P1dB is 31dBm. CATV OEM customers, subcontractors and ODMs will appreciate the benefits of GaN HEMT processes offering as much as 2dB higher gain coupled with lower power dissipation than pure GaAs devices.

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