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Cree Releases New 25W GaN MMIC Power Amplifier
2015-03-13 03:21:17| wirelessdesignonline News Articles
Cree, Inc., a leading global supplier of GaN HEMT transistors and monolithic microwave integrated circuits (MMICs), has introduced a new 25W GaN MMIC for 6–12GHz performance.
Tags: power
releases
amplifier
cree
Richardson RFPD Introduces 0.3 - 20 GHz GaAs pHEMT MMIC Low Noise Amplifier From ADI
2015-02-17 14:51:31| Semiconductors - Topix.net
Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a GaAs pHEMT MMIC LNA from Analog Devices, Inc. The HMC1049LP5E operates between 0.3 and 20 GHz and provides 15 dB of small signal gain, 1.8 dB noise figure, and output I P3 of + 29 dBm, while requiring only 70 mA from a +7V supply. T he P1dB output power of + 14.5 dBm enables the HMC1049LP5E to function as an LO driver for balanced, I/Q or image reject mixers.
Richardson RFPD Introduces 0.3 - 20 GHz GaAs pHEMT MMIC Low Noise Amplifier From ADI
2015-02-17 06:30:23| rfglobalnet Home Page
Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a GaAs pHEMT MMIC LNA from Analog Devices, Inc.
Custom MMIC Awarded U.S. Navy Phase II SBIR Contract
2015-02-06 06:23:09| rfglobalnet Home Page
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the awarding of a Phase II Small Business Innovative Research (SBIR) contract from the United States Navy, entitled “Gallium Nitride Based Activity Electronically Scanned Array (AESA) Technology for High Altitude Periscope Detection.”
Tags: custom
contract
phase
awarded
Ultra Low Noise MMIC Amplifier has 17-27 GHz bandwidth.
2015-01-26 14:31:26| Industrial Newsroom - All News for Today
Supplied in die form, CMD163 features gain of +24 dB, noise figure of <1.3 dB, and output 1 dB compression point of +19 dBm across 17–27 GHz bandwidth. All-positive bias scheme eliminates need for negative voltages and sequencing circuitry, and bias conditions are Vdd = 4 V @ 120 mA and Vgg = 3.0 V. LNA is internally matched 50 Ω design that does not require any external components aside from bypass capacitors. Areas of use include military and space applications and communication systems.
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