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GaN MMIC Switch Controls 100-W Pulses
2014-10-05 18:23:12| Semiconductors - Topix.net
Download this article in .PDF format This file type includes high resolution graphics and schematics when applicable.Gallium-nitride semiconductor devices are quickly capturing the attention of high-frequency circuit designers for their excellent performance at high frequencies. In addition, many of these devices also offer good high-power signal-handling capabilities, such as the model TGS2355-SM monolithic-microwave-integrated-circuit single-pole, double-throw switch from TriQuint Semiconductor.
Tags: switch
controls
gan
pulses
Richardson RFPD Introduces New Multi-Octave, Wideband MMIC Switch And Amplifiers From Microsemi
2014-08-12 12:12:20| rfglobalnet Home Page
Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a range of new, multi-octave, wideband MMIC devices, including a switch and eight amplifiers, from Microsemi Corporation.
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introduces
richardson
amplifiers
Richardson RFPD Introduces New Multi-Octave, Wideband MMIC Switch And Amplifiers From Microsemi
2014-08-12 12:12:20| wirelessdesignonline News Articles
Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a range of new, multi-octave, wideband MMIC devices, including a switch and eight amplifiers, from Microsemi Corporation.
Tags: switch
introduces
richardson
amplifiers
Low-Loss High-Isolation PST MMIC Switch covers DC to 20 GHz.
2014-07-03 14:31:03| Industrial Newsroom - All News for Today
At 10 GHz, CMD204C3 features insertion loss of <1 dB, isolation of 50 dB, and 0.1 dB compression point of +25 dBm. Respective values at 20 GHz are 1.2 dB, 40 dB, and +24 dBm. Also available in die form (CMD204), this control device is terminated on both RF ports, fully reciprocal, controlled by complementary logic levels of 0/-5 V, and does not require any additional bias supply. Applications include microwave radio and VSAT, telecom infrastructure, test instrumentation, and military end-use. This story is related to the following:Single Pole, Single Throw (SPST) Switches
GaN MMIC PAs suit Ka-band satellite communication terminals.
2014-06-10 14:38:44| Industrial Newsroom - All News for Today
Developed with GaN HEMT power process, APN228 and APN229 provide respective saturated output power of 13 and 8 W. These broadband, 2-stage amplifiers operate from 27–31 GHz and, when integrated in solid-state power amplifiers (SSPAs), enable increased data rate in communication systems. Respectively, 16.0 mm² APN228 and 7.41 mm² APN229 provide 19.5 and 20 dB linear gain, 41.2 dBm (13 W) and 39 dBm (8 W) saturated output power, and >27% and >30% Power Added Efficiency (PAE). This story is related to the following:Communication Systems and EquipmentSearch for suppliers of: Integrated Circuits (IC) | Microwave Monolithic Integrated Circuit (MMIC) Amplifiers
Tags: pas
communication
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satellite
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