Home › power
 

Keywords :   


Tag: power

100W, 32V, DC-3.5 GHz Power Transistor: TQP0102 Datasheet

2015-07-29 15:44:00| rfglobalnet Downloads

The TQP0102 is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC – 4 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FS Datasheet

2015-07-29 15:41:00| rfglobalnet Downloads

The TGF2819-FS is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 
 

285W, 36V, DC-2 GHz Power Transistor: T1G2028536-FL Datasheet

2015-07-29 15:36:50| rfglobalnet Downloads

The T1G2028536-FL is a 285W discrete GaN on SiC HEMT with an operating frequency in the DC – 2 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

 

Conductor Coating optimizes power grid.

2015-07-29 14:31:06| Industrial Newsroom - All News for Today

Consisting of thin, durable coating applied to surface of any General Cable TransPowr® overhead conductor, E3X™ Technology increases conductor emissivity and reduces absorptivity, optimizing heat dissipation and minimizing heat absorption. Technology also minimizes sag or size which optimizes structures, hardware, and labor for new lines. TransPowr with E3X Technology can be applied without any modification to installation, termination, or maintenance practices.

Tags: power grid coating conductor

 

GaN on SiC Power Transistors

2015-07-29 13:06:12| rfglobalnet Products

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

Tags: power sic gan transistors

 

Sites : [780] [781] [782] [783] [784] [785] [786] [787] [788] [789] [790] [791] [792] [793] [794] [795] [796] [797] [798] [799] next »