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Comtech Xicom Technology Introduces New Industry-Best Compact Efficient GaN Solid-State X-Band SATCOM Block Upconverter

2016-05-03 06:20:01| wirelessdesignonline News Articles

Comtech Xicom Technology, Inc., the technology leader in high-power amplifiers for satellite communication (SATCOM) uplink applications, announces a new GaN-based solid-state X-band block upconverter (BUC) that packs a tremendous amount of power into a 5.3-pound (2.4 kg) antenna-mount outdoor unit.

Tags: technology block efficient compact

 

Pasternack Introduces Their PE15A5025 GaN Power Amplifier Operating In The Popular 2 To 6 GHz Band

2016-05-03 05:51:14| rfglobalnet Home Page

Pasternack, a leading provider of RF, microwave and millimeter wave products, announces their new PE15A5025 50 Watt gallium nitride (GaN) coaxial power amplifier operating in the popular 2 to 6 GHz frequency band.

Tags: to popular power band

 
 

Pasternack Introduces Their PE15A5025 GaN Power Amplifier Operating In The Popular 2 To 6 GHz Band

2016-05-03 05:51:14| wirelessdesignonline News Articles

Pasternack, a leading provider of RF, microwave and millimeter wave products, announces their new PE15A5025 50 Watt gallium nitride (GaN) coaxial power amplifier operating in the popular 2 to 6 GHz frequency band.

Tags: to popular power band

 

Wolfspeed Releases New 28V 30W GaN HEMT Die

2016-04-29 04:40:09| rfglobalnet Home Page

Wolfspeed, A Cree Company and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13, 2016 in Clearwater Beach, Fla.

Tags: die releases gan 28v

 

DC 4 GHz GaN RF Transistors: QDP1010 Datasheet

2016-04-28 10:03:06| wirelessdesignonline Downloads

The QDP1010 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 10W, 50V device with an output power level of 11W at 2 GHz, and a linear gain of 24.7 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

Tags: ghz gan datasheet transistors

 

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