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Simulation-Based Methodology For broadband GaN Power Amplifier Design
2016-04-26 11:04:25| rfglobalnet Downloads
This application note presents a simulation-based flow methodology in designing broadband GaN power amplifiers. This method uses load-line, load-pull, and real-frequency synthesis techniques for the design of a Class F amplifier using the Qorvo 30 W GaN high electron mobility transistor (HEMT). The Modelithics GaN HEMT nonlinear model for the Qorvo transistor in conjunction with NI AWR Design Environment™ design software, designers were able to reach the goals of a minimum output power of 25 W, bandwidth of 1.8 – 2.2 GHz, and a maximum power-added efficiency (PAE).
Tags: design
power
methodology
broadband
Revolutionize High-Performance Power Conversion With TI's 600-V GaN FET Power Stage
2016-04-26 08:57:41| rfglobalnet News Articles
Building on decades of power-management innovation, Texas Instruments (TI) (NASDAQ: TXN) today announced the availability of600-V gallium nitride (GaN) 70-mΩ field-effect transistor (FET) power-stage engineering samples, making TI the first and only semiconductor manufacturer to publicly offer a high-voltage driver-integrated GaN solution.
Tags: power
stage
conversion
tis
New Web-Based GaN Product Selector Guide From EPC Simplifies Product Selection For High Performance Power Conversion Systems
2016-04-22 03:48:45| electronicsweb News Articles
Efficient Power Conversion Corporation (EPC) announces the implementation of a user-controlled GaN product selector search tool on the EPC website, epc-co.com
Tags: high
product
power
guide
Peregrine Semiconductor Expands MPACDoherty Product Family to Support GaN Power Amplifier Frequencies
2016-04-21 07:10:36| rfglobalnet Home Page
In booth #309 Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces two UltraCMOS® MPAC–Doherty products—thePE46130andPE46140.
Tags: support
family
product
power
Growing Affordability Of RF GaN Technology Drives Global Market: TMR
2016-04-15 08:18:33| rfglobalnet Home Page
The growing need for high-frequency, high-power transistors, combined with the massive demand for wireless telecommunications, is the key factor driving the global radio frequency gallium nitride (RF GaN) technology market.
Tags: technology
market
global
growing
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