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Fujitsu Develops GaN Power Amplifier With World's Highest Output Performance For W-Band Wireless Transmissions
2016-01-26 04:54:42| rfglobalnet News Articles
Fujitsu Limited and Fujitsu Laboratories Ltd. (collectively "Fujitsu") recently announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.
Tags: power
performance
highest
wireless
Fujitsu Develops GaN Power Amplifier With World's Highest Output Performance For W-Band Wireless Transmissions
2016-01-26 04:54:42| wirelessdesignonline News Articles
Fujitsu Limited and Fujitsu Laboratories Ltd. (collectively "Fujitsu") recently announced the development of a gallium-nitride (GaN) high-electron mobility transistor (HEMT) power amplifier for use in W-band (75-110 GHz) transmissions. This can be used in a high-capacity wireless network with coverage over a radius of several kilometers.
Tags: power
performance
highest
wireless
Advanced Video Series Teaches How To Design With Gallium Nitride (GaN) Power Devices For State-Of-The-Art Power Conversion
2016-01-26 03:27:17| electronicsweb Home Page
Efficient Power Conversion Corporation (www.epc-co.com) has expanded its video library on GaN technology with the addition of a nine-part educational video series designed to provide power system design engineers advanced technical information and application examples on how to design more efficient power conversion systems using gallium nitride-based transistors and integrated circuits
Tags: video
advanced
design
power
0.5-6 GHz GaN 40 Watt SPDT Switch: TGS2355 Datasheet
2016-01-08 12:27:39| rfglobalnet Downloads
The TGS2355 is a SPDT reflective GaN switch operating in the 0.5 – 6 GHz frequency range. This switch provides up to 100W input power handling, and maintains a low insertion loss of 1.3 dB or less, and a typical 40 dB isolation.
0.5-6 GHz GaN 40 Watt SPDT Switch: TGS2355 Datasheet
2016-01-08 12:27:39| wirelessdesignonline Downloads
The TGS2355 is a SPDT reflective GaN switch operating in the 0.5 – 6 GHz frequency range. This switch provides up to 100W input power handling, and maintains a low insertion loss of 1.3 dB or less, and a typical 40 dB isolation.
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