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NXP Launches GaN RF Power Transistors Optimized For Doherty Amplifiers In Cellular Base-Stations

2016-05-26 10:48:02| rfglobalnet Home Page

NXP Semiconductors N.V. has announced the expansion on their portfolio of 48V gallium nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base-stations. NXP is showcasing the new GaN transistors in booth 1839 at the IEEE International Microwave Symposium (IMS 2016) in San Francisco (23-26 May).

Tags: power cellular optimized launches

 

Diamond Microwave Launches Feature-Rich GaN X-Band SSPAs

2016-05-25 08:42:35| rfglobalnet News Articles

Diamond Microwave, a specialist in high performance microwave power amplifiers, has announced the launch of a new range of X-band GaN-based pulsed solid-state power amplifiers (SSPA) offering integrated monitoring and protection.

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MACOM Achieves Up To 79% Efficiency For Wireless Basestations With New High-Power, Plastic-Packaged GaN Power Transistors

2016-05-25 08:20:44| rfglobalnet Home Page

MACOM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, recently announced the newest entries in its MAGb series of GaN on Silicon power transistors for use in macro wireless basestations.

Tags: power wireless efficiency gan

 

MACOM Demonstrates Cutting-Edge Gen4 GaN Portfolio And Other Innovative Products At IMS 2016

2016-05-24 09:54:45| rfglobalnet News Articles

MACOM Technology Solutions Inc. is prepared to showcase its industry leading GaN on Silicon portfolio and other high-performance products at IEEE’s International Microwave Symposium (IMS) 2016 in San Francisco, California, May 24 - 26. MACOM will feature new product solutions optimized for commercial, industrial, scientific and medical RF applications. MACOM experts will also be available at different sessions and workshops throughout the week to answer your questions.

Tags: products portfolio innovative demonstrates

 

Ampleon GaN RF Transistor Family Complements LDMOS Portfolio With High-Efficiency And Wideband Solutions For Mobile Broadband

2016-05-20 08:15:41| rfglobalnet Home Page

Ampleon recently announced its second generation of 50 Volts 0.5 um GaN on SiC RF power transistors, dedicated for mobile broadband applications.

Tags: family mobile solutions portfolio

 

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