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05.23.12 -- Gallium Nitride Power Transistors For High-Temperature Applications
2018-10-03 08:03:04| electronicsweb News Articles
05/23/12 ElectronicsWeb Newsletter
Tags: power
applications
transistors
nitride
05.23.12 -- Gallium Nitride Power Transistors For High-Temperature Applications
2018-08-29 14:03:40| electronicsweb News Articles
05/23/12 ElectronicsWeb Newsletter
Tags: power
applications
transistors
nitride
05.23.12 -- Gallium Nitride Power Transistors For High-Temperature Applications
2017-02-08 06:32:42| electronicsweb News Articles
05/23/12 ElectronicsWeb Newsletter
Tags: power
applications
transistors
nitride
05.23.12 -- Gallium Nitride Power Transistors For High-Temperature Applications
2016-06-13 17:08:46| electronicsweb News Articles
05/23/12 ElectronicsWeb Newsletter
Tags: power
applications
transistors
nitride
NXP Introduces New High Performance GaN RF Power Transistors For Cellular Base Stations
2016-05-31 08:45:35| wirelessdesignonline News Articles
NXP Semiconductors N.V. (NASDAQ:NXPI), today announced an expansion to its portfolio of 48V Gallium Nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations
Tags: high
power
base
performance