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Tag: power transistors
Ampleon Introduces GaN RF Power Transistors In 10 To 200W Ratings
2015-12-18 06:09:34| rfglobalnet Home Page
Ampleon recently announced the extension of its portfolio of GaN RF power transistors based on a 0.5um HEMT process technology.
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power
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GaN Systems Showcases High Current 650V, 100A Gallium Nitride Power Transistors for First Time at Energy Conversion Congress and Expo
2015-09-10 12:31:11| Industrial Newsroom - All News for Today
Sampling now with major solar, industrial and automotive customers worldwide; new customer applications on display OTTAWA, Ontario, GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, is displaying its GS66540C 650V 100A high current GaN power transistors for the first time at...
Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic Packages
2015-05-18 07:00:00| Freescale Press Releases
Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic PackagesFor more information click on title.
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Clamshell Spring Pin QFN Socket aids power transistors testing.
2015-04-27 14:31:07| Industrial Newsroom - All News for Today
Addressing requirements for testing power transistor, CBT-QFN-7043 accommodates 6.512 x 4.961 mm QFN package with 1 mm pitch, 9 positions, and ground pad. Stamped spring pin contactor, featuring 19 g actuation force per ball and cycle life of 125,000 insertions, offers 0.93 nH self inductance, insertion loss of <1 dB at 23 GHz, and current capacity of 4 A @ 80°C temperature rise. Socket mounts using supplied hardware on target PCB without any soldering.
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spring
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aids
GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.
2015-03-27 13:31:09| Industrial Newsroom - All News for Today
Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency.