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Efficient Power Conversion (EPC) Introduces Enhancement Mode 450 V Gallium Nitride Power Transistors For High Frequency Applications

2015-01-19 04:16:45| electronicsweb Home Page

EPC announces the EPC2027, a 450 V normally off (enhancement mode) power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density

Tags: high power mode applications

 

Efficient Power Conversion (EPC) Introduces 300 V Gallium Nitride Power Transistors For High Frequency Applications

2014-10-17 03:29:03| electronicsweb Home Page

EPC announces the EPC2025, a 300 V power transistor for use in applications requiring high frequency switching in order to achieve higher efficiency and power density

Tags: high power applications frequency

 
 

Toshiba Develops Tunneling Field Effect Transistors For Ultra-Low Power MCU

2014-09-19 10:52:57| electronicsweb Home Page

Toshiba Corporation recently announced the development of Tunneling Field Effect Transistors (TFET) that utilize a new operating principle for ultra-low power MCU

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RF Power Transistors suit radar pulsed applications.

2014-09-02 14:31:59| Industrial Newsroom - All News for Today

Consisting of gold-metalized unmatched GaN on Silicon Carbide, Models MAGX-000035-015000 and MAGX-000035-01500S deliver 17 W of peak output power with 15.5 dB of power gain and 63% drain efficiency. Devices provide 50 V operation over frequency range of DC–3.5 GHz. Offered in both enhanced flanged and flangeless ceramic package, transistors have MTTF of 600 years and are suitable for civilian and military radar pulsed applications. This story is related to the following:Silicon Transistors | RF Transistors |

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GaN Systems to Show New Gallium Nitride High Power Transistors at Energy Conversion Congress ...

2014-09-01 06:00:00| Industrial Newsroom - All News for Today

Wide range of devices enable smaller, lighter and more efficient power electronics for a more sustainable energy future<br /> <br /> OTTAWA, Ontario &ndash; GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting its latest products at ECCE, the IEEE Energy Conversion Congress Expo being held in Pittsburgh, USA from September 14 &ndash; 18.  The event is the world&#39;s leading technical conference and exhibition focussing on next generation green ...This story is related to the following:Gallium Nitride (GaN) Transistors |

Tags: show high power systems

 

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