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Tag: hemt
50V GaN HEMT for LTE: CGHV22100
2013-03-14 15:53:33| rfglobalnet Products
This GaN HEMT (gallium-nitride high electron mobility transistor) covers the 1.8-2.2 GHz frequency range. It features 20 dB Gain, -35 dBc ACLR (at 25 W PAVE), and 31-35% efficiency (at 25 W PAVE). A high degree of DPD (digital pre-distortion) correction can also be applied to this transistor.
New Broadband GaN HEMT Device
2013-02-11 01:55:23| wirelessdesignonline News Articles
IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
Tags: device
broadband
gan
hemt
New Broadband GaN HEMT Device
2013-02-11 01:55:23| rfglobalnet News Articles
IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
Tags: device
broadband
gan
hemt
GaN on Sic HEMT Transistor
2013-01-25 10:57:51| rfglobalnet Products
These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.
Tags: sic
gan
transistor
hemt