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50V GaN HEMT for LTE: CGHV22100

2013-03-14 15:53:33| rfglobalnet Products

This GaN HEMT (gallium-nitride high electron mobility transistor) covers the 1.8-2.2 GHz frequency range. It features 20 dB Gain, -35 dBc ACLR (at 25 W PAVE), and 31-35% efficiency (at 25 W PAVE). A high degree of DPD (digital pre-distortion) correction can also be applied to this transistor.

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New Broadband GaN HEMT Device

2013-02-11 01:55:23| wirelessdesignonline News Articles

IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.

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New Broadband GaN HEMT Device

2013-02-11 01:55:23| rfglobalnet News Articles

IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.

Tags: device broadband gan hemt

 

GaN on Sic HEMT Transistor

2013-01-25 10:57:51| rfglobalnet Products

These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.

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