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Power Transistor leverages gallium nitride (GaN) technology.

2013-06-06 14:29:25| Industrial Newsroom - All News for Today

Fully qualified NPT1015 is 28 V, DC–2.5 GHz, 50 W power transistor with 15 dB saturated gain, 65% peak drain efficiency at 2 GHz, and thermal resistance is 1.9°C/W. During VSWR testing, all devices operated in saturated average power condition driven by 4,000 carrier 200 MHz wideband signal with 19.5 dB peak-to-average ratio. The devices showed 100% survivability and ~0.2 dB average change in saturated output power. SIGANTIC® GaN-on-Si process uses 4 in. silicon substrate. This story is related to the following:Power Transistors

Tags: power technology gan transistor

 

TriQuint Accelerates Gallium Nitride Offerings, Releases Significant New Products And Foundry Services

2013-05-22 19:16:00| rfglobalnet News Articles

TriQuint Semiconductor, Inc., a leading RF solutions supplier and technology innovator, recently announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes.

Tags: services products significant releases

 
 

New Method Joins Gallium Nitride And Diamond For Better Thermal Management

2013-05-07 07:19:22| rfglobalnet News Articles

Many military radio frequency (RF) systems, like radar and communication systems, use a class of power amplifiers (PAs) called monolithic microwave integrated circuits (MIMIC). MMIC PAs using gallium nitride (GaN) transistors hold great promise for enhanced RF performance, but operational characteristics are strongly affected by thermal resistance. Much of this resistance comes at the thermal junction where the substrate material of the circuit connects to the GaN transistor.

Tags: management method diamond thermal

 

RF Micro Devices Announces Flexible Gallium Arsenide Sourcing Strategy

2013-03-21 05:40:17| rfglobalnet News Articles

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency solutions, announced today a new Gallium Arsenide (GaAs) sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth.

Tags: strategy devices micro flexible

 

RF Micro Devices Announces Flexible Gallium Arsenide Sourcing Strategy

2013-03-21 05:40:17| wirelessdesignonline News Articles

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency solutions, announced today a new Gallium Arsenide (GaAs) sourcing strategy intended to increase manufacturing flexibility, expand gross margin, and support aggressive growth.

Tags: strategy devices micro flexible

 

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