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Si-based GaN difficult to replace sapphire, says TSMC SSL president
2013-01-22 07:34:02| Semiconductors - Topix.net
Toshiba and US-based Bridgelux will reportedly start volume production of 8-inch Si-substrate GaN wafers for use to make LED chips in the first quarter of 2013, according to Taiwan-based makers.
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president
replace
ssl
Richardson RFPD Introduces Pair Of 35W, 32V GaN On SiC RF Power Transistors From TriQuint
2013-01-17 03:46:47| wirelessdesignonline News Articles
Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor, Inc. (TriQuint).
Tags: power
pair
sic
introduces
Richardson RFPD Introduces Pair Of 35W, 32V GaN On SiC RF Power Transistors From TriQuint
2013-01-17 03:46:47| rfglobalnet News Articles
Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for a pair of 35W Gallium Nitride (GaN) radio frequency power transistors from TriQuint Semiconductor, Inc. (TriQuint).
Tags: power
pair
sic
introduces
New 1.8GHz 80W GaN Doherty Power Amplifier
2013-01-15 06:14:53| rfglobalnet News Articles
RFHIC model RTP18080-20 employs GaN (Gallium Nitride) technology to provide 49dBm of average output power from 1805-1880MHz. With 40% efficiency, this amplifier is the key for current LTE wave of Remote Radio Head (RRH) solutions, which complement existing macro base stations.
Tags: power
amplifier
gan
doherty
New 1.8GHz 80W GaN Doherty Power Amplifier
2013-01-15 06:14:53| wirelessdesignonline News Articles
RFHIC model RTP18080-20 employs GaN (Gallium Nitride) technology to provide 49dBm of average output power from 1805-1880MHz. With 40% efficiency, this amplifier is the key for current LTE wave of Remote Radio Head (RRH) solutions, which complement existing macro base stations.
Tags: power
amplifier
gan
doherty
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