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13-16 GHz GaN Power Amplifier: APN226
2013-07-10 15:42:12| rfglobalnet Downloads
This datasheet includes a description for the APN226 GaN power amplifier, as well as information on its performance characteristics, maximum ratings, features, and more.
13-16 GHz GaN Power Amplifier: APN226
2013-07-10 15:39:08| rfglobalnet Products
The APN226 GaN power amplifier covers the 13-16 GHz frequency range and features 20 dB (typ) linear gain, 40 dBm (typ) Psat, a 0.2um GaN HEMT process, 4 mil SiC substrate, and DC power of 24 VDC@ 880 mA.
GaN on Silicon LEDs carry 350 mW rating.
2013-07-09 14:31:03| Industrial Newsroom - All News for Today
Manufactured on 6 in. MAGIC™ (Manufactured on GaN I/C) line, 350 mW LED (part No. PLB010350) operates anywhere from 350 mA to 2 A in pulse applications. This entry level lighting product is intended for use in solid-state lighting and entertainment lighting products, including accent lighting, wall washing, wall grazing, strip-lighting, and pulse lighting applications. This story is related to the following:Display and Presentation EquipmentLight Emitting Diodes (LED) |
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The Expanding Role Of GaN HEMT Devices In Military Electronics Design
2013-07-03 03:25:33| rfglobalnet Downloads
In the early 2000s, military designers developing the next generation of high-frequency, high-power amplifiers for radar, communications and EW equipment had reached the performance limits of conventional technologies, namely Traveling Wave Tubes (TWTs), silicon Laterally Diffused Metal Oxide Semiconductor (Si LDMOS) transistors, and gallium arsenide (GaAs) MESFETs.By Tom Dekker, Cree
Tags: design
electronics
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military
For Better SWaP, Choose GaN
2013-07-03 03:00:32| rfglobalnet Downloads
Today’s GaNbased products are rising to the challenge of rapidly evolving demands for size, reliability, linearity, power density and energy efficiency, by providing RF system engineers with the flexibility to achieve significantly higher power and efficiency, with lower part count, board space and resultant cost.
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