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50V GaN HEMT for LTE: CGHV22100
2013-03-14 15:53:33| rfglobalnet Products
This GaN HEMT (gallium-nitride high electron mobility transistor) covers the 1.8-2.2 GHz frequency range. It features 20 dB Gain, -35 dBc ACLR (at 25 W PAVE), and 31-35% efficiency (at 25 W PAVE). A high degree of DPD (digital pre-distortion) correction can also be applied to this transistor.
New Broadband GaN HEMT Device
2013-02-11 01:55:23| wirelessdesignonline News Articles
IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
Tags: device
broadband
gan
hemt
New Broadband GaN HEMT Device
2013-02-11 01:55:23| rfglobalnet News Articles
IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain.
Tags: device
broadband
gan
hemt
02.06.13 -- SiC RF Power Transistor, GaN MMIC Amplifiers, Signal Conditioning
2013-02-05 00:22:53| rfglobalnet News Articles
02/06/13RF Globalnet - Product Showcase
Tags: power
signal
conditioning
sic
2.1GHz 5W GaN Doherty Power Amplifier
2013-02-01 03:10:40| rfglobalnet Home Page
RFHIC telecommunications amplifier model RTP21005-11 employs GaN (Gallium Nitride) technology to provide 37dBm of average output power from 2110-2170MHz.
Tags: power
amplifier
gan
doherty
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