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RF-Lambda Selects TriQuint GaN For New Line Of High Power Amplifiers

2013-06-30 19:05:00| wirelessdesignonline News Articles

TriQuint Semiconductor, Inc., a leading RF solutions supplier and technology innovator, recently announced that RF-Lambda, a global microwave products manufacturer, has developed a new line of high power amplifiers based on TriQuint gallium nitride (GaN) power transistors.

Tags: high line power selects

Fujitsu Develops High-Output Mm-Wave Transceiver Based On GaN HEMT

2013-06-25 08:44:09| rfglobalnet News Articles

Fujitsu Laboratories of Kawasaki, Japan has developed compact gallium nitride high-electron-mobility transistor (HEMT)-based transceiver module technology with an output of 10W operating at frequencies up to the millimeter-wave band.

Tags: based fujitsu develops gan

Flange Mount GaN Power Amplifier: APN180FP Datasheet

2013-06-11 17:51:13| rfglobalnet Home Page

This datasheet includes information on performance characteristics, absolute maximum ratings, flanged package dimensions/pin locations, and more for the APN180FP Flange Mount GaN Power Amplifier.

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Flange Mount GaN Power Amplifier

2013-06-11 17:49:30| rfglobalnet Home Page

This two-stage, 8 Watt GaN HEMT power amplifier covers the 27 to 31 GHz frequency range. It has a linear gain of 20 dB, 39 dBm (typ) power saturation, and 28 VDC DC power at 720 mA. It’s well suited for applications involving point-to-point/multipoint radios, and in SATCOM terminals.

Tags: power mount amplifier gan

RFMD Introduces 500 Watt GaN L-Band Amplifier

2013-06-10 04:07:35| rfglobalnet News Articles

RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency solutions, today introduced the RFHA1027, a gallium nitride (GaN) matched power transistor (MPT) that will deliver industry-leading pulse power performance of 500W in a compact flanged package at L-Band.

Tags: watt introduces amplifier gan

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