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MACOM Furthers GaN Portfolio Leadership With New Wideband Power Transistor At IMS 2015
2015-05-21 04:06:34| rfglobalnet Home Page
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, recently announced the new NPT2022, a wideband transistor optimized for DC-2 GHz operation and built using a proprietary Gallium Nitride (GaN) on Silicon (Si) process.
Tags: power
leadership
portfolio
gan
Fourth Generation GaN Technology
2015-05-20 18:06:42| rfglobalnet Home Page
Day 2 of the IMS 2015 exhibition brought us by M/A-COM’s booth where Greg Baker gave us an overview of his company’s recent announcement of their fourth generation GaN technology.
Tags: technology
generation
fourth
gan
GaN HEMT Devices handle TWT radar system issues.
2015-05-20 14:31:05| Industrial Newsroom - All News for Today
Offering pulsed saturated power performance greater than 400 W, Model CGHV59350 is used in ground-based defense and Doppler weather radar systems. C-Band device operates over 5.2–5.9 GHz bandwidth and exhibits 60% typ drain efficiency. Delivering 700 W of saturated RF pulsed power, Model CGHV31500F is suited for ATC radar systems. S-Band unit operates over 2.7–3.1GHz bandwidth and exhibits 12 dB power gain. Both 50 Ω, fully matched devices come in 0.7 x 0.9 in. ceramic/metal flange package.
Tags: system
issues
handle
devices
Advanced GaN And GaAs MMICs Unveiled By Custom MMIC At IMS 2015
2015-05-19 06:45:55| rfglobalnet Home Page
Custom MMIC will be debuting several new GaAs and GaN MMIC amplifiers, switches, and multipliers at the 2015 International Microwave Symposium (IMS) in Phoenix, Arizona, being held from May 19 through May 21. Their latest products include two GaAs LNAs, the CMD228P4 and CMD229P4, and a GaAs passive doubler, the CMD225.
Tags: advanced
custom
gan
unveiled
Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic Packages
2015-05-18 07:00:00| Freescale Press Releases
Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic PackagesFor more information click on title.
Tags: advanced
power
plastic
packages
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