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MACOM Introduces GaN Bias Controller And Sequence Module
2015-04-07 08:01:14| rfglobalnet Home Page
M/A-COM Technology Solutions Holdings Inc. (“MACOM”), a leading supplier of high performance RF, microwave, millimeterwave and photonic semiconductor products, recently announced a GaN bias controller and sequencer for fixed and pulsed negative gate biasing.
Tags: sequence
module
controller
bias
GaN on SiC HEMT Pulsed Power Transistors offer 650 W peak output.
2015-03-27 13:31:09| Industrial Newsroom - All News for Today
Available in standard flange or earless flange packaging, MAGX-000912-650L00 and MAGX-000912-650L0S are gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistors intended for L-band pulsed avionics applications. These gold metalized, internally matched, GaN on SiC depletion mode RF power transistors operate over 960–1,215 MHz range and feature 600 year MTTF. Peak output power is 650 W with 20 dB typ gain and 62% drain efficiency.
GaN Power Semiconductors simplify PCB design with topside cooling.
2015-03-24 13:31:07| Industrial Newsroom - All News for Today
With current ratings from 8–250 A, gallium nitride (GaN) power transistors feature GaNPX™ packaging and are based on Island Technology®. Die consist of islands and is embedded within laminate construction. Series of galvanic processes replace conventional techniques, such as clips, wire bonds, and molding compounds. While packaged to be cooled via topside of chip using heat sink or fan, products can also be cooled from bottom surface of die through conduction to PCB.
Tags: design
power
cooling
simplify
TI Reveals Industry's First 80-V Half-bridge GaN FET Module
2015-03-24 11:31:14| Industrial Newsroom - All News for Today
Fully integrated GaN FET power-stage prototype enables power designers to quickly realize the true benefits of GaN DALLAS -- Texas Instruments (TI) (NASDAQ: TXN) today introduced the industry's first 80-V, 10-A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, which consists of a...
MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor
2015-03-24 06:43:30| wirelessdesignonline News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.
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