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Broadband MMIC GaN LNA meets high-RF power survivability needs.
2015-04-29 14:31:08| Industrial Newsroom - All News for Today
Fabricated in GaN technology and supplied in leadless, 4 x 4 mm, ceramic package, CMD219C4 broadband MMIC low-noise amplifier (LNA) operates from 4–8 GHz with gain of 22.5 dB, noise figure of 1.0 dB, and output 1 dB compression point of +17 dBm. Product withstands RF input power levels of up to 5 W without permanent damage. Areas of use include microwave radios and C-band applications, such as point-to-point and point-to-multi-point radios, military and space, and test instrumentation.
Tags: power
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broadband
gan
MACOM to Demonstrate Cutting-Edge Gen 4 GaN Portfolio at IMS 2015
2015-04-28 12:31:13| Industrial Newsroom - All News for Today
Lowell, Massachusetts M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, will showcase the industrys broadest and most advanced Gallium Nitride (GaN) RF product portfolio at IMS2015 in Phoenix, Arizona, May 19-21. MACOMs...
Tags: portfolio
gen
demonstrate
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ON Semiconductor to Showcase LLC Power Supply, New Developments in GaN, and Motor Drive Control Demonstrations at PCIM 2015, Hall 9 Booth 559
2015-04-24 12:31:12| Industrial Newsroom - All News for Today
ON Semiconductor, driving energy efficient innovations, will be showcasing some of its latest advances in power management technology at PCIM 2015, including compact IPM, significant developments in GaN, and a sensor-less motor driver controller. Featured demonstrations include: Current-Mode LLC Power...
Tags: power
control
drive
supply
Custom MMIC's New GaN LNA Meets Need For High RF Power Survivability
2015-04-24 06:16:56| rfglobalnet Home Page
Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is pleased to announce the addition of the CMD219C4, a new GaN low-noise amplifier, to their standard product catalog.
Broadband GaN HEMTs suit applications to 4 GHz.
2015-04-22 14:31:06| Industrial Newsroom - All News for Today
Available in 2-leaded flange and pill packages, Model CGHV40050 operates from 50 V rail and delivers 50 W typ output power up to 4 GHz. Device provides 17.5 dB small signal gain at 1.8 GHz and 55% efficiency at PSAT. Rated for operating junction temperature of 225°C and case operating temperature spanning -40 to +80°C, transistor is suited for RF and microwave applications, including narrow band UHF applications, L- and S-Band applications, and multi-octave bandwidth amplifiers.
Tags: applications
suit
ghz
broadband
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