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Modelithics And Qorvo To Significantly Expand The GaN RF Simulation Model Library

2015-05-15 06:14:35| rfglobalnet Home Page

Modelithics, Inc. and Qorvo announce plans to expand the very popular Modelithics Qorvo GaN Library of high accuracy non-linear models for Qorvo transistors. The current GaN library version (v1.5) has 29 packaged and die transistor models. New plans include adding over 20 new Qorvo GaN transistor models.

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MACOM Announces Fourth Generation GaN Technology

2015-05-15 06:00:05| rfglobalnet Home Page

M/A-COM Technology Solutions Holdings, Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave, millimeterwave and photonic semiconductor products, today announced its fourth generation of Gallium Nitride on Silicon (GaN on Si) technology.

Tags: technology generation fourth announces

 
 

GaN SSPA Powers Ku Band Block Upconverter

2015-05-12 07:04:15| rfglobalnet News Articles

The Model MFC147 from TRAK Microwave provides 13.75 to 14.50 GHz coverage for civilian and military aviation Ku-band SATCOM applications, including In-Flight Entertainment (IFE) systems and UAV communications.

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Gallium nitride power switching semiconductor company GaN Systems raises $20M in Series C

2015-05-08 12:55:35| Green Car Congress

Tags: company power systems series

 

GaN Gives Power and Flexibility to L-Band Radar

2015-05-07 13:26:00| rfglobalnet Home Page

Sales of radar are on the rise causing an increase in shipments of air traffic control radar systems. The increase in production of these systems is spurring intensified research and development in the RF and microwave domain, with a stress on improving the performance of the L-band. Since L-band radar systems require thousands of Watts of pulsed power, high-power RF transistors need to be employed. GaN is the most promising of semiconductor materials used in construction of RF power transistors, enabling breakthroughs in power output capacity, temperature tolerance and efficiency.

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