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GaN Wideband Power Amplifier: NPA1006 Datasheet
2015-04-20 11:33:34| wirelessdesignonline Downloads
The NPS1006 is a GaN on Si HEMT D-Mode amplifier that is 100% RF tested for applications such as test and measurement, defense communications, land mobile radio, and more.
Tags: power
amplifier
gan
datasheet
GaN Wideband Power Amplifier: NPA1006 Datasheet
2015-04-20 11:33:34| rfglobalnet Downloads
The NPS1006 is a GaN on Si HEMT D-Mode amplifier that is 100% RF tested for applications such as test and measurement, defense communications, land mobile radio, and more.
Tags: power
amplifier
gan
datasheet
GaN Wideband Power Amplifier: NPA1006
2015-04-20 11:23:29| rfglobalnet Home Page
The NPA1006 is a 20 - 1000 MHz, wideband GaN power amplifier. This amplifier has output levels to 12.5 W (41 dBm) and is specifically designedfor saturated and linear operation.
Tags: power
amplifier
gan
wideband
GaN Wideband Power Amplifier: NPA1007
2015-04-20 10:58:11| rfglobalnet Home Page
The NPA1007 is a 20 - 2500 MHz, wideband GaN power amplifier. This amplifier has output levels to 10 W (40 dBm) and is specifically designedfor saturated and linear operation.
Tags: power
amplifier
gan
wideband
GaN Bias Controller/Sequencer offers protection, dynamic control.
2015-04-10 14:31:07| Industrial Newsroom - All News for Today
Used for fixed and pulsed negative gate biasing, MABC-001000-DP000L provides proper gate voltage and pulsed drain voltage biasing for DUT. Module also provides bias sequencing to ensure pulsed drain voltage cannot be applied to DUT unless negative gate bias voltage is present. Along with protection and dynamic control, features include target total switch transition time of ≤500 nsec, open drain output current of ≤200 mA for external MOSFET switch drive, and gate bias output current of ≤50 mA.
Tags: control
offers
protection
dynamic
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