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Northwestern Researchers Develop Compact, High-Power Terahertz Source At Room Temperature
2013-10-11 04:11:30| rfglobalnet News Articles
Terahertz (THz) radiation — radiation in the wavelength range of 30 to 300 microns — is gaining attention due to its applications in security screening, medical and industrial imaging, agricultural inspection, astronomical research, and other areas.
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room
develop
temperature
Microchip's New 2.4 GHz RF High-Power Amplifier Supports 256-QAM Modulation; Extends Range Of Ultra-High Data Rate WLAN Systems
2013-10-10 04:29:42| rfglobalnet News Articles
Microchip Technology Inc., a leading provider of microcontroller, mixed-signal, analog and Flash-IP solutions, today announced its latest 2.4 GHz RF high-power amplifier—the SST12CP12—which adds support for the 256-QAM ultra-high data rate modulation.
Agilent Technologies to Demonstrate High-Power System Power Supplies at Automotive Expo
2013-10-08 06:00:00| Industrial Newsroom - All News for Today
SANTA CLARA, Calif. -- Agilent Technologies Inc. (NYSE: A) will feature the new Advanced Power System family of power supplies at the Automotive Testing Expo (Booth 12024), Oct. 22-24, at the Suburban Collection Showplace in Novi, Mich.<br /> <br /> The APS power supplies with VersaPower architecture offer industry-leading specifications for fast operation, advanced measurements to accurately capture power profiles, and integrated features to reduce automated test system development time and ...This story is related to the following:Electronic Components and Devices Sponsored by: Globtek Inc. - Your Power Partner...For Over 20 Years!Electrical Equipment and Systems Sponsored by: Globtek Inc. - MOBILE BANNER ADSearch for suppliers of: Meter Calibrators | Digital Multimeters | Power Supplies | Insertion Handheld Systems
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power
supplies
automotive
Microsemi 750 Watt GaN On SiC RF Power Transistor Delivers Unparalleled High-power Performance For Aviation Applications
2013-09-20 06:39:56| rfglobalnet News Articles
Microsemi Corporation(Nasdaq: MSCC),a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today expanded its family of radio frequency (RF) power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology with a new 750 watt (W) RF transistor.
Tags: power
performance
applications
delivers
Peregrine Enables New Approach To RF Switching In High-Power Wireless Systems
2013-09-13 03:01:40| rfglobalnet News Articles
Peregrine Semiconductor Corporation, a fabless provider of high-performance radio frequency integrated circuits (RFICs), recently announced the PE42820 and PE42821 single-pole double throw (SPDT) switches for high-power wireless applications.
Tags: systems
approach
wireless
enables
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