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Qorvo's New Plastic GaN RF Transistors Make X-Band Radar More Affordable
2015-10-02 07:22:00| wirelessdesignonline News Articles
Qorvo™, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced three new GaN RF transistors in low-cost plastic packages designed to enable smaller size and greater reliability in civilian marine, airborne and infrastructure radar systems.
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radar
GaN RF Input-Matched Transistors: TGF3021-SM Datasheet
2015-09-24 18:32:51| rfglobalnet Downloads
The TGF3021-SM is a wideband 32 V RF transistor operating in the 0.03 to 4.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
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gan transistors
GaN RF Input-Matched Transistors: TGF3020-SM Datasheet
2015-09-24 18:27:05| rfglobalnet Downloads
The TGF3020-SM is a wideband 32 V RF transistor operating in the 4.0 to 6.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
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datasheet
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gan transistors
GaN RF Input-Matched Transistors: TGF3015-SM Datasheet
2015-09-24 18:23:29| rfglobalnet Downloads
The TGF3015-SM is a wideband 32 V RF transistor operating in the 30 MHz to 3.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
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datasheet
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gan transistors
GaN RF Input-Matched Transistors: TGF2965-SM Datasheet
2015-09-24 18:18:41| rfglobalnet Downloads
The TGF2965-SM is a wideband 32 V RF transistor operating in the 0.03 to 4.0 GHz frequency range. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.
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gan transistors
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