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GaN RF Input-Matched Transistors

2015-09-24 18:14:41| rfglobalnet Products

Qorvo offers a series of wideband 32 V RF input-matched transistors that are ideal for commercial and defense communications applications. These devices have an integrated matching network that allows for wideband gain and power performance, while the output is simultaneously matched to optimize power and efficiency for any region within the band.

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GaN Systems Showcases High Current 650V, 100A Gallium Nitride Power Transistors for First Time at Energy Conversion Congress and Expo

2015-09-10 12:31:11| Industrial Newsroom - All News for Today

Sampling now with major solar, industrial and automotive customers worldwide; new customer applications on display OTTAWA, Ontario,  GaN Systems Inc., a leading developer of gallium nitride power switching semiconductors, is displaying its GS66540C 650V 100A high current GaN power transistors for the first time at...

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09.10.15 -- 'Squishy' Transistors | The First mmW CMOS Platform

2015-09-09 03:31:13| rfglobalnet Home Page

09/10/15RF Globalnet Newsletter

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Squishy Transistors: A Device Concept For Fast, Low-Power Electronics

2015-09-08 04:25:06| rfglobalnet Home Page

An international team of researchers from the National Physical Laboratory (NPL), IBM, the University of Edinburgh and Auburn University have shown that a new device concept - a 'squishy' transistor - can overcome the predicted power bottleneck caused by CMOS (complementary metal-oxide-semiconductor) technology reaching its fundamental limits.

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Squishy Transistors: A Device Concept For Fast, Low-Power Electronics

2015-09-08 04:25:06| wirelessdesignonline News Articles

An international team of researchers from the National Physical Laboratory (NPL), IBM, the University of Edinburgh and Auburn University have shown that a new device concept - a 'squishy' transistor - can overcome the predicted power bottleneck caused by CMOS (complementary metal-oxide-semiconductor) technology reaching its fundamental limits.

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