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GaN on SiC Power Transistors

2015-07-29 13:06:12| rfglobalnet Products

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

Tags: power sic gan transistors

 

GaN on SiC Power Transistors

2015-07-29 13:06:12| wirelessdesignonline Products

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

Tags: power sic gan transistors

 
 

High-Temperature Recess For Normally-Off Gallium Nitride Transistors

2015-07-14 10:55:46| rfglobalnet Home Page

Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) at 4GHz and in pulsed-mode.

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Qorvo's New Plastic GaN Transistors Provide Cost Effective Radar And Communications System Solutions

2015-05-21 06:44:55| rfglobalnet Home Page

Qorvo, Inc., a leading provider of RF solutions for mobile, infrastructure and aerospace/defense applications, recently announced a new family of input-matched gallium nitride (GaN) transistors in a low-cost plastic package designed to enable cost effective commercial and military radar and radio communications systems.

Tags: system provide cost effective

 

Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic Packages

2015-05-18 07:00:00| Freescale Press Releases

Freescale Introduces Breakthrough Ultra-Wideband RF Power GaN Transistors in Advanced Plastic PackagesFor more information click on title.

Tags: advanced power plastic packages

 

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